Semiconductor Electronics · Question 71

Which one of the following statements is false?

1. Pure Si doped with trivalent impurities gives a p-type semiconductor.
2. Majority carriers in a n-type semiconductor are holes.
3. Minority carriers in a p-type semiconductor are electrons.
4. The resistance of intrinsic semiconductor decreases with increase of temperature.

Which one of the following bonds produces a solid that reflects light in the visible region and whose electrical conductivity decreases with temperature and has high melting point?

1. metallic bonding
2. van der Waals' bonding
3. ionic bonding
4. covalent bonding

The device that can act as a complete electronic circuit is

1. junction diode
2. integrated circuit
3. junction transistor
4. zener diode

A common emitter amplifier has a voltage gain of 50, an input impedance of 100 and an output impedance of 200 . The power gain of the amplifier is

1. 500
2. 1000
3. 1250
4. 50

A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can detect a signal of wavelength

1. 4000 nm
2. 6000 nm
3. 4000 A
4. 6000 A

The symbolic representation of four logic gates are given below [figure] The logic symbols for OR, NOT and NAND gates are respectively

1. (iv), (i), (iii)
2. (iv), (ii), (i)
3. (i), (iii), (iv)
4. (iii), (iv), (ii)

A transistor is operated in common-emitter configuration at VC = 2 V such that a change in the base current from 100 to 200 produces a change in the collector current from 5 mA to 10 mA. The current gain is

1. 100
2. 150
3. 50
4. 75

A p-n photodiode is made of a material with a band gap of 2.0 eV. The minimum frequency of the radiation that can be absorbed by the material is nearly

1. 1 1014 Hz
2. 20 1014 Hz
3. 10 1014 Hz
4. 5 1014 Hz

The voltage gain of an amplifier with 9% negative feedback is 10. The voltage gain without feedback will be

1. 1.25
2. 100
3. 90
4. 10

Which one of the following represents forward bias diode?

1. [figure]
2. [figure]
3. [figure]
4. [figure]