Semiconductor Electronics · Question 81

In the following circuit, the output Y for all possible inputs A and B is expressed by the truth table. [figure]

1. [figure]
2. [figure]
3. [figure]
4. [figure]

In the energy band diagram of a material shown below, the open circles and filled circles denote holes and electrons respectively. The material is [figure]

1. an insulator
2. a metal
3. an n-type semiconductor
4. a p-type semiconductor

The following figure shows a logic gate circuit with two inputs A and B and the output C. [figure] The voltage waveforms of A, B and C are as shown below. [figure] The logic circuit gate is

1. OR gate
2. AND gate
3. NAND gate
4. NOR gate

Which one of the following represents forward bias diode ?

1. [figure]
2. [figure]
3. [figure]
4. [figure]

A transistor is operated in common emitter configuration at constant collector voltage VC = 1.5 V such that a change in the base current from 100 to 150 produces a change in the collector current from 5 mA to 10 mA. The current gain is

1. 50
2. 67
3. 75
4. 100

Choose the only false statement from the following.

1. In conductors the valence and conduction bands overlap.
2. Substances with energy gap of the order of 10 eV are insulators.
3. The resistivity of a semiconductor increases with increase in temperature.
4. The conductivity of a semiconductor increases with increase in temperature.

Zener diode is used for

1. amplification
2. rectification
3. stabilisation
4. producing oscillations in an oscillator.

Application of a forward bias to a p-n junction

1. widens the depletion zone
2. increases the potential difference across the depletion zone
3. increases the number of donors on the n side
4. decreases the electric field in the depletion zone.

Carbon, silicon and germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy band gaps represented by (Eg)C, (Eg)Si and (Eg)Ge respectively. Which one of the following relationships is true in their case?

1. (Eg)C > (Eg)Si
2. (Eg)C < (Eg)Si
3. (Eg)C = (Eg)Si
4. (Eg)C < (Eg)Ge.

In a p-n junction photo cell, the value of the photo-electromotive force produced by monochromatic light is proportional to

1. The barrier voltage at the p-n junction.
2. The intensity of the light falling on the cell.
3. The frequency of the light falling on the cell.
4. The voltage applied at the p-n junction.