PYQSide ExamsMy practice

Semiconductor Electronics · Question 62

AIPMT 2011 (Mains)MCQEasy📈 Topic in 62% papers+4−1
1

A Zener diode, having breakdown voltage equal to 15 V, is used in a voltage regulator circuit shown in figure. The current through the diode is [figure]

  1. 5 mA
  2. 10 mA
  3. 15 mA
  4. 20 mA

Answer

(1) 5 mA

Solution

The Zener diode is in breakdown, so the voltage across it and across the 1 kΩ load is 15 V.

Current through the load: IL = 151000 = 15 mA

Voltage across the 250 Ω resistor = 20 - 15 = 5 V

I = 5250 = 0.02 A = 20 mA

IZ = I - IL = 20 - 15 = 5 mA

Answer: (1)

AIPMT 2011 (Mains)

Keep practising — Semiconductor Electronics

2

In the following figure, the diodes which are forward biased, are [figure]

  1. (A), (B) and (D)
  2. (C) only
  3. (C) and (A)
  4. (B) and (D)
AIPMT 2011 (Mains)
3

Pure Si at 500 K has equal number of electron (ne) and hole (nh) concentrations of 1.5 1016 m-3. Doping by indium increases nh to 4.5 1022 m-3. The doped semiconductor is of

  1. p-type having electron concentration ne = 5 109 m-3
  2. n-type with electron concentration ne = 5 1022 m-3
  3. p-type with electron concentration ne = 2.5 1010 m-3
  4. n-type with electron concentration ne = 2.5 1023 m-3
AIPMT 2011 (Mains)
4

In forward biasing of the p-n junction

  1. the positive terminal of the battery is connected to p-side and the depletion region becomes thick.
  2. the positive terminal of the battery is connected to n-side and the depletion region becomes thin.
  3. the positive terminal of the battery is connected to n-side and the depletion region becomes thick.
  4. the positive terminal of the battery is connected to p-side and the depletion region becomes thin.
AIPMT 2011 (Prelims)
5

Symbolic representations of four logic gates are shown as [figure] Pick out which ones are for AND, NAND and NOT gates, respectively

  1. (ii), (iii) and (iv)
  2. (iii), (ii) and (i)
  3. (iii), (ii) and (iv)
  4. (iii), (iv) and (ii)
AIPMT 2011 (Prelims)
6

If a small amount of antimony is added to germanium crystal

  1. it becomes a p-type semiconductor
  2. the antimony becomes an acceptor atom
  3. there will be more free electrons than holes in the semiconductor
  4. its resistance is increased
AIPMT 2011 (Prelims)
7

A transistor is operated in common emitter configuration at VC = 2 V such that a change in the base current from 100 A to 300 A produces a change in the collector current from 10 mA to 20 mA. The current gain is

  1. 50
  2. 75
  3. 100
  4. 25
Out of syllabusAIPMT 2011 (Prelims)
8

The following figure shows a logic gate circuit with two inputs A and B and the output Y. The voltage waveforms of A, B and Y are as given. [figure] The logic gate is

  1. NOR gate
  2. OR gate
  3. AND gate
  4. NAND gate
AIPMT 2010 (Mains)
9

For transistor action Which one of the following pairs of statements is correct?

  1. D and A
  2. A and B
  3. B and C
  4. C and D
Out of syllabusAIPMT 2010 (Mains)
10

To get an output Y = 1 in given circuit which of the following input will be correct? [figure]

  1. A 1, B 0, C 0
  2. A 1, B 0, C 1
  3. A 1, B 1, C 0
  4. A 0, B 1, C 0
AIPMT 2010 (Prelims)
11

Which one of the following statements is false?

  1. Pure Si doped with trivalent impurities gives a p-type semiconductor.
  2. Majority carriers in a n-type semiconductor are holes.
  3. Minority carriers in a p-type semiconductor are electrons.
  4. The resistance of intrinsic semiconductor decreases with increase of temperature.
AIPMT 2010 (Prelims)

All Semiconductor Electronics PYQs →

PDFDownload Semiconductor Electronics PYQs as PDF Free, with answer key and a QR code to every solution — print it or study offline⬇
All NEET Physics chapters