Semiconductor Electronics · Question 1

In the circuit shown below, the voltage appearing across the diode D will be of the form : [figure]

1. [figure]
2. [figure]
3. [figure]
4. [figure]

The current I in the circuit shown below is : (All diodes are ideal and identical) [figure]

1. 13 A
2. 152 A
3. 53 A
4. 59 A

An ideal Zener diode with breakdown voltage of -3 V is reverse biased with a negative input voltage Vi = -5 V. The magnitude of voltage difference between point B and A is: [figure]

1. 0 V
2. 3 V
3. 2 V
4. 1 V

Three identical p-n junction diodes D1, D2, and D3 are connected across a battery as shown in the figure. If the width of the depletion regions of D1, D2 and D3 are W1, W2 and W3, respectively, then the correct option is: [figure]

1. W2 > W1 = W3
2. W1 > W2 > W3
3. W3 = W1 > W2
4. W3 > W2 > W1

A full wave rectifier circuit with diodes (D1) and (D2) is shown in the figure. If input supply voltage Vin = 220 (100 t) volt, then at t = 15 msec [figure]

1. D1 and D2 both are forward biased
2. D1 and D2 both are reverse biased
3. D1 is forward biased, D2 is reverse biased
4. D1 is reverse biased, D2 is forward biased.

The output (Y) of the given logic implementation is similar to the output of an/a gate. [figure]

1. OR
2. NOR
3. AND
4. NAND

A logic circuit provides the output Y as per the following truth table : [figure] The expression of the output Y is :

1. A B + A
2. A B + A
3. B
4. B

Consider the following statements A and B and identify the correct answer : [figure]

1. A is correct but B is incorrect
2. A is incorrect but B is correct
3. Both A and B are correct
4. Both A and B are incorrect

The output (Y) of the given logic gate is similar to the output of an/a [figure]

1. NAND gate
2. NOR gate
3. OR gate
4. AND gate

[figure] The I-V characteristics shown above are exhibited by a

1. Light emitting diode
2. Zener diode
3. Photodiode
4. Solar cell