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Semiconductor Electronics · Question 47

AIPMT 2014MCQEasy📈 Topic in 62% papers+4−1
1

The given graph represents V-I characteristic for a semiconductor device. [figure] Which of the following statement is correct ?

  1. It is V-I characteristic for solar cell where, point A represents open circuit voltage and point B short circuit current.
  2. It is for a solar cell and points A and B represent open circuit voltage and current, respectively.
  3. It is for a photodiode and points A and B represent open circuit voltage and current, respectively.
  4. It is for a LED and points A and B represent open circuit voltage and short circuit current, respectively.

Answer

(1) It is V-I characteristic for solar cell where, point A represents open circuit voltage and point B short circuit current.

Solution

As per NCERT, the I–V characteristic of a solar cell is drawn in the fourth quadrant, because a solar cell does not draw current but supplies it to the load.

The point where the curve cuts the voltage axis (A) is the open circuit voltage Voc (I = 0).

The point where it cuts the current axis (B) is the short circuit current Isc (V = 0).

Answer: (1)

AIPMT 2014

Keep practising — Semiconductor Electronics

2

The barrier potential of a p-n junction depends on Which one of the following is correct ?

  1. A and B only
  2. B only
  3. B and C only
  4. A, B and C
AIPMT 2014
3

In a n-type semiconductor, which of the following statements is true?

  1. Holes are minority carriers and pentavalent atoms are dopants.
  2. Holes are majority carriers and trivalent atoms are dopants.
  3. Electrons are majority carriers and trivalent atoms are dopants.
  4. Electrons are minority carriers and pentavalent atoms are dopants.
NEET 2013
4

The output (X) of the logic circuit shown in figure will be [figure]

  1. X = A . B
  2. X = A + B
  3. X = A . B
  4. X = A . B
NEET 2013
5

In a common emitter (CE) amplifier having a voltage gain G, the transistor used has transconductance 0.03 mho and current gain 25. If the above transistor is replaced with another one with transconductance 0.02 mho and current gain 20, the voltage gain will be

  1. 13G
  2. 54G
  3. 23G
  4. 1.5G
Out of syllabusNEET 2013
6

The output from a NAND gate is divided into two in parallel and fed to another NAND gate. The resulting gate is a [figure]

  1. AND gate
  2. NOR gate
  3. OR gate
  4. NOT gate
NEET 2013 (Karnataka)
7

In an unbiased p-n junction, holes diffuse from the p-region to n-region because of

  1. The attraction of free electrons of n-region.
  2. The higher hole concentration in p-region than that in n-region.
  3. The higher concentration of electrons in the n-region than that in the p-region.
  4. The potential difference across the p-n junction.
NEET 2013 (Karnataka)
8

One way in which the operation of an n-p-n transistor differs from that of a p-n-p is

  1. The emitter junction injects minority carriers into the base region of the p-n-p
  2. The emitter injects holes into the base of the p-n-p and electrons into the base region of n-p-n
  3. The emitter injects holes into the base of n-p-n
  4. The emitter junction is reverse biased in n-p-n
Out of syllabusNEET 2013 (Karnataka)
9

To get an output Y = 1 in given circuit which of the following input will be correct ? [figure]

  1. A 1, B 0, C 0
  2. A 1, B 0, C 1
  3. A 1, B 1, C 0
  4. A 0, B 1, C 0
AIPMT 2012 (Mains)
10

The input resistance of a silicon transistor is 100 . Base current is changed by 40 which results in a change in collector current by 2 mA. This transistor is used as a common emitter amplifier with a load resistance of 4 k . The voltage gain of the amplifier is

  1. 2000
  2. 3000
  3. 4000
  4. 1000
Out of syllabusAIPMT 2012 (Mains)
11

Two ideal diodes are connected to a battery as shown in the circuit. The current supplied by the battery is [figure]

  1. 0.75 A
  2. zero
  3. 0.25 A
  4. 0.5 A
AIPMT 2012 (Prelims)

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