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Semiconductor Electronics · Question 52

NEET 2013 (Karnataka)MCQEasy📈 Topic in 75% papers+4−1
1

The output from a NAND gate is divided into two in parallel and fed to another NAND gate. The resulting gate is a [figure]

  1. AND gate
  2. NOR gate
  3. OR gate
  4. NOT gate

Answer

(1) AND gate

Solution

Output of the first NAND gate: Y = A . B

The second NAND gate has both inputs joined, so it works as a NOT gate:

C = Y . Y = Y

C = A . B = A . B

The resulting gate is an AND gate.

Answer: (1)

NEET 2013 (Karnataka)

Keep practising — Semiconductor Electronics

2

In an unbiased p-n junction, holes diffuse from the p-region to n-region because of

  1. The attraction of free electrons of n-region.
  2. The higher hole concentration in p-region than that in n-region.
  3. The higher concentration of electrons in the n-region than that in the p-region.
  4. The potential difference across the p-n junction.
NEET 2013 (Karnataka)
3

One way in which the operation of an n-p-n transistor differs from that of a p-n-p is

  1. The emitter junction injects minority carriers into the base region of the p-n-p
  2. The emitter injects holes into the base of the p-n-p and electrons into the base region of n-p-n
  3. The emitter injects holes into the base of n-p-n
  4. The emitter junction is reverse biased in n-p-n
Out of syllabusNEET 2013 (Karnataka)
4

To get an output Y = 1 in given circuit which of the following input will be correct ? [figure]

  1. A 1, B 0, C 0
  2. A 1, B 0, C 1
  3. A 1, B 1, C 0
  4. A 0, B 1, C 0
AIPMT 2012 (Mains)
5

The input resistance of a silicon transistor is 100 . Base current is changed by 40 which results in a change in collector current by 2 mA. This transistor is used as a common emitter amplifier with a load resistance of 4 k . The voltage gain of the amplifier is

  1. 2000
  2. 3000
  3. 4000
  4. 1000
Out of syllabusAIPMT 2012 (Mains)
6

Two ideal diodes are connected to a battery as shown in the circuit. The current supplied by the battery is [figure]

  1. 0.75 A
  2. zero
  3. 0.25 A
  4. 0.5 A
AIPMT 2012 (Prelims)
7

C and Si both have same lattice structure; having 4 bonding electrons in each. However, C is insulator whereas Si is intrinsic semiconductor. This is because

  1. In case of C the valence band is not completely filled at absolute zero temperature.
  2. In case of C the conduction band is partly filled even at absolute zero temperature.
  3. The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third.
  4. The four bonding electrons in the case of C lie in the third orbit, whereas for Si they lie in the fourth orbit.
AIPMT 2012 (Prelims)
8

The figure shows a logic circuit with two inputs A and B and the output C. The voltage wave forms across A, B and C are as given. The logic circuit gate is [figure]

  1. OR gate
  2. NOR gate
  3. AND gate
  4. NAND gate
AIPMT 2012 (Prelims)
9

In a CE transistor amplifier, the audio signal voltage across the collector resistance of 2 k is 2 V. If the base resistance is 1 k and the current amplification of the transistor is 100, the input signal voltage is

  1. 0.1 V
  2. 1.0 V
  3. 1 mV
  4. 10 mV
Out of syllabusAIPMT 2012 (Prelims)
10

Transfer characteristics [output voltage (V0) vs input voltage (Vi)] for a base biased transistor in CE configuration is as shown in the figure. For using transistor as a switch, it is used [figure]

  1. in region III
  2. both in region (I) and (III)
  3. in region II
  4. in region I
Out of syllabusAIPMT 2012 (Prelims)
11

A Zener diode, having breakdown voltage equal to 15 V, is used in a voltage regulator circuit shown in figure. The current through the diode is [figure]

  1. 5 mA
  2. 10 mA
  3. 15 mA
  4. 20 mA
AIPMT 2011 (Mains)

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