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Semiconductor Electronics · Question 53

NEET 2013 (Karnataka)MCQEasy📈 Topic in 25% papers+4−1
1

In an unbiased p-n junction, holes diffuse from the p-region to n-region because of

  1. The attraction of free electrons of n-region.
  2. The higher hole concentration in p-region than that in n-region.
  3. The higher concentration of electrons in the n-region than that in the p-region.
  4. The potential difference across the p-n junction.

Answer

(2) The higher hole concentration in p-region than that in n-region.

Solution

As per NCERT, diffusion of charge carriers takes place from a region of higher concentration to a region of lower concentration.

The p-region has a much higher concentration of holes than the n-region,

holes diffuse from the p-side to the n-side.

The potential barrier actually opposes this diffusion.

Answer: (2)

NEET 2013 (Karnataka)

Keep practising — Semiconductor Electronics

2

One way in which the operation of an n-p-n transistor differs from that of a p-n-p is

  1. The emitter junction injects minority carriers into the base region of the p-n-p
  2. The emitter injects holes into the base of the p-n-p and electrons into the base region of n-p-n
  3. The emitter injects holes into the base of n-p-n
  4. The emitter junction is reverse biased in n-p-n
Out of syllabusNEET 2013 (Karnataka)
3

To get an output Y = 1 in given circuit which of the following input will be correct ? [figure]

  1. A 1, B 0, C 0
  2. A 1, B 0, C 1
  3. A 1, B 1, C 0
  4. A 0, B 1, C 0
AIPMT 2012 (Mains)
4

The input resistance of a silicon transistor is 100 . Base current is changed by 40 which results in a change in collector current by 2 mA. This transistor is used as a common emitter amplifier with a load resistance of 4 k . The voltage gain of the amplifier is

  1. 2000
  2. 3000
  3. 4000
  4. 1000
Out of syllabusAIPMT 2012 (Mains)
5

Two ideal diodes are connected to a battery as shown in the circuit. The current supplied by the battery is [figure]

  1. 0.75 A
  2. zero
  3. 0.25 A
  4. 0.5 A
AIPMT 2012 (Prelims)
6

C and Si both have same lattice structure; having 4 bonding electrons in each. However, C is insulator whereas Si is intrinsic semiconductor. This is because

  1. In case of C the valence band is not completely filled at absolute zero temperature.
  2. In case of C the conduction band is partly filled even at absolute zero temperature.
  3. The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third.
  4. The four bonding electrons in the case of C lie in the third orbit, whereas for Si they lie in the fourth orbit.
AIPMT 2012 (Prelims)
7

The figure shows a logic circuit with two inputs A and B and the output C. The voltage wave forms across A, B and C are as given. The logic circuit gate is [figure]

  1. OR gate
  2. NOR gate
  3. AND gate
  4. NAND gate
AIPMT 2012 (Prelims)
8

In a CE transistor amplifier, the audio signal voltage across the collector resistance of 2 k is 2 V. If the base resistance is 1 k and the current amplification of the transistor is 100, the input signal voltage is

  1. 0.1 V
  2. 1.0 V
  3. 1 mV
  4. 10 mV
Out of syllabusAIPMT 2012 (Prelims)
9

Transfer characteristics [output voltage (V0) vs input voltage (Vi)] for a base biased transistor in CE configuration is as shown in the figure. For using transistor as a switch, it is used [figure]

  1. in region III
  2. both in region (I) and (III)
  3. in region II
  4. in region I
Out of syllabusAIPMT 2012 (Prelims)
10

A Zener diode, having breakdown voltage equal to 15 V, is used in a voltage regulator circuit shown in figure. The current through the diode is [figure]

  1. 5 mA
  2. 10 mA
  3. 15 mA
  4. 20 mA
AIPMT 2011 (Mains)
11

In the following figure, the diodes which are forward biased, are [figure]

  1. (A), (B) and (D)
  2. (C) only
  3. (C) and (A)
  4. (B) and (D)
AIPMT 2011 (Mains)

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