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Semiconductor Electronics · Question 90

AIPMT 2005MCQEasy📈 Topic in 0% papers+4−1
1

Carbon, silicon and germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy band gaps represented by (Eg)C, (Eg)Si and (Eg)Ge respectively. Which one of the following relationships is true in their case?

  1. (Eg)C > (Eg)Si
  2. (Eg)C < (Eg)Si
  3. (Eg)C = (Eg)Si
  4. (Eg)C < (Eg)Ge.

Answer

(1) (Eg)C > (Eg)Si

Solution

As per NCERT, the band gaps are:

C (diamond): Eg 5.4 eV (insulator)

Si: Eg 1.1 eV

Ge: Eg 0.7 eV

(Eg)C > (Eg)Si > (Eg)Ge

Answer: (1)

AIPMT 2005

Keep practising — Semiconductor Electronics

2

In a p-n junction photo cell, the value of the photo-electromotive force produced by monochromatic light is proportional to

  1. The barrier voltage at the p-n junction.
  2. The intensity of the light falling on the cell.
  3. The frequency of the light falling on the cell.
  4. The voltage applied at the p-n junction.
AIPMT 2005
3

In semiconductors at room temperature

  1. the valence band is partially empty and the conduction band is partially filled
  2. the valence band is completely filled and the conduction band is partially filled
  3. the valence band is completely filled
  4. the conduction band is completely empty
AIPMT 2004
4

The peak voltage in the output of a half wave diode rectifier fed with a sinusoidal signal without filter is 10 V. The d.c. component of the output voltage is

  1. (10/ 2) V
  2. ( 10 ) V
  3. 10 V
  4. (20/ ) V
AIPMT 2004
5

The output of OR gate is 1

  1. if both inputs are zero
  2. if either or both inputs are 1
  3. only if both inputs are 1
  4. if either input is zero
AIPMT 2004
6

Of the diodes shown in the following diagrams, which one is reverse biased?

  1. [figure]
  2. [figure]
  3. [figure]
  4. [figure]
AIPMT 2004
7

Reverse bias applied to a junction diode

  1. lowers the potential barrier
  2. raises the potential barrier
  3. increases the majority carrier current
  4. increases the minority carrier current
AIPMT 2003
8

If a full wave rectifier circuit is operating from 50 Hz mains, the fundamental frequency in the ripple will be

  1. 25 Hz
  2. 50 Hz
  3. 70.7 Hz
  4. 100 Hz
AIPMT 2003
9

Barrier potential of a p-n junction diode does not depend on

  1. diode design
  2. temperature
  3. forward bias
  4. doping density
AIPMT 2003
10

An n-p-n transistor conducts when

  1. both collector and emitter are positive with respect to the base
  2. collector is positive and emitter is negative with respect to the base
  3. collector is positive and emitter is at same potential as the base
  4. both collector and emitter are negative with respect to the base
Out of syllabusAIPMT 2003
11

In a p-n junction

  1. high potential at n side and low potential at p side
  2. high potential at p side and low potential at n side
  3. p and n both are at same potential
  4. undetermined.
AIPMT 2002

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