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Semiconductor Electronics · Question 26

NEET (UG) 2020MCQEasy📈 Topic in 25% papers+4−1
1

The increase in the width of the depletion region in a p-n junction diode is due to :

  1. reverse bias only
  2. both forward bias and reverse bias
  3. increase in forward current
  4. forward bias only

Answer

(1) reverse bias only

Solution

As per NCERT, under forward bias the applied voltage opposes the barrier potential, so the barrier height and the width of the depletion layer decrease.

Under reverse bias the applied voltage is in the same direction as the barrier potential, so the barrier height and the width of the depletion region increase.

The depletion region widens due to reverse bias only.

Answer: (1)

NEET (UG) 2020

Keep practising — Semiconductor Electronics

2

For the logic circuit shown, the truth table is : [figure]

  1. [figure]
  2. [figure]
  3. [figure]
  4. [figure]
NEET (UG) 2020
3

For transistor action, which of the following statements is correct?

  1. Base, emitter and collector regions should have same size.
  2. Both emitter junction as well as the collector junction are forward biased.
  3. The base region must be very thin and lightly doped.
  4. Base, emitter and collector regions should have same doping concentrations.
Out of syllabusNEET (UG) 2020
4

The correct Boolean operation represented by the circuit diagram drawn is : [figure]

  1. OR
  2. NAND
  3. NOR
  4. AND
NEET (UG) 2019
5

For a p-type semiconductor, which of the following statements is true?

  1. Holes are the majority carriers and trivalent atoms are the dopants.
  2. Holes are the majority carriers and pentavalent atoms are the dopants.
  3. Electrons are the majority carriers and pentavalent atoms are the dopants.
  4. Electrons are the majority carriers and trivalent atoms are the dopants.
NEET (UG) 2019
6

In the combination of the following gates the output Y can be written in terms of inputs A and B as [figure]

  1. A.B
  2. A. B + A.B
  3. A. B + A.B
  4. A + B
NEET 2018
7

In a p-n junction diode, change in temperature due to heating

  1. affects only reverse resistance
  2. affects only forward resistance
  3. does not affect resistance of p-n junction
  4. affects the overall V - I characteristics of p-n junction
NEET 2018
8

In the circuit shown in the figure, the input voltage Vi is 20 V, VBE = 0 and VCE = 0. The values of IB, IC and β are given by [figure]

  1. IB = 40 , IC = 10 mA, β = 250
  2. IB = 25 , IC = 5 mA, β = 200
  3. IB = 20 , IC = 5 mA, β = 250
  4. IB = 40 , IC = 5 mA, β = 125
Out of syllabusNEET 2018
9

The given electrical network is equivalent to [figure]

  1. OR gate
  2. NOR gate
  3. NOT gate
  4. AND gate
NEET 2017
10

Which one of the following represents forward bias diode ?

  1. [figure]
  2. [figure]
  3. [figure]
  4. [figure]
NEET 2017
11

In a common emitter transistor amplifier the audio signal voltage across the collector is 3 V. The resistance of collector is 3 k . If current gain is 100 and the base resistance is 2 k , the voltage and power gain of the amplifier is

  1. 15 and 200
  2. 150 and 15000
  3. 20 and 2000
  4. 200 and 1000
Out of syllabusNEET 2017

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