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Semiconductor Electronics · Question 23

NEET (UG) 2021MCQEasy📈 Topic in 62% papers+4−1
1

Consider the following statements (A) and (B) and identify the correct answer. (A) A Zener diode is connected in reverse bias, when used as a voltage regulator. (B) The potential barrier of p-n junction lies between 0.1 V to 0.3 V.

  1. (A) is incorrect but (B) is correct.
  2. (A) and (B) both are correct.
  3. (A) and (B) both are incorrect.
  4. (A) is correct and (B) is incorrect.

Answer

(4) (A) is correct and (B) is incorrect.

Solution

(A) As per NCERT, a Zener diode is operated in the reverse breakdown region; as a voltage regulator it is connected in reverse bias. (A) is correct.

(B) The barrier potential of a p-n junction is about 0.7 V for Si and about 0.2–0.3 V for Ge, so it does not lie between 0.1 V and 0.3 V in general. (B) is incorrect.

Answer: (4)

NEET (UG) 2021

Keep practising — Semiconductor Electronics

2

The electron concentration in an n-type semiconductor is the same as hole concentration in a p-type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them.

  1. No current will flow in p-type, current will only flow in n-type
  2. Current in n-type = current in p-type
  3. current in p-type > current in n-type
  4. current in n-type > current in p-type
NEET (UG) 2021
3

For the given circuit, the input digital signals are applied at the terminals A, B and C. What would be the output at the terminal y? [figure]

  1. [figure]
  2. [figure]
  3. [figure]
  4. [figure]
NEET (UG) 2021
4

The increase in the width of the depletion region in a p-n junction diode is due to :

  1. reverse bias only
  2. both forward bias and reverse bias
  3. increase in forward current
  4. forward bias only
NEET (UG) 2020
5

For the logic circuit shown, the truth table is : [figure]

  1. [figure]
  2. [figure]
  3. [figure]
  4. [figure]
NEET (UG) 2020
6

For transistor action, which of the following statements is correct?

  1. Base, emitter and collector regions should have same size.
  2. Both emitter junction as well as the collector junction are forward biased.
  3. The base region must be very thin and lightly doped.
  4. Base, emitter and collector regions should have same doping concentrations.
Out of syllabusNEET (UG) 2020
7

The correct Boolean operation represented by the circuit diagram drawn is : [figure]

  1. OR
  2. NAND
  3. NOR
  4. AND
NEET (UG) 2019
8

For a p-type semiconductor, which of the following statements is true?

  1. Holes are the majority carriers and trivalent atoms are the dopants.
  2. Holes are the majority carriers and pentavalent atoms are the dopants.
  3. Electrons are the majority carriers and pentavalent atoms are the dopants.
  4. Electrons are the majority carriers and trivalent atoms are the dopants.
NEET (UG) 2019
9

In the combination of the following gates the output Y can be written in terms of inputs A and B as [figure]

  1. A.B
  2. A. B + A.B
  3. A. B + A.B
  4. A + B
NEET 2018
10

In a p-n junction diode, change in temperature due to heating

  1. affects only reverse resistance
  2. affects only forward resistance
  3. does not affect resistance of p-n junction
  4. affects the overall V - I characteristics of p-n junction
NEET 2018
11

In the circuit shown in the figure, the input voltage Vi is 20 V, VBE = 0 and VCE = 0. The values of IB, IC and β are given by [figure]

  1. IB = 40 , IC = 10 mA, β = 250
  2. IB = 25 , IC = 5 mA, β = 200
  3. IB = 20 , IC = 5 mA, β = 250
  4. IB = 40 , IC = 5 mA, β = 125
Out of syllabusNEET 2018

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