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Semiconductor Electronics · Question 59

AIPMT 2012 (Prelims)MCQMedium📈 Topic in 75% papers+4−1
1

The figure shows a logic circuit with two inputs A and B and the output C. The voltage wave forms across A, B and C are as given. The logic circuit gate is [figure]

  1. OR gate
  2. NOR gate
  3. AND gate
  4. NAND gate

Answer

(1) OR gate

Solution

Reading the waveforms interval by interval (1 = high, 0 = low):

0 to t1: A = 0, B = 0 C = 0

t1 to t2: A = 1, B = 0 C = 1

t2 to t3: A = 1, B = 1 C = 1

t3 to t4: A = 0, B = 1 C = 1

t4 to t5: A = 0, B = 0 C = 0

C = 0 only when both inputs are 0, and C = 1 when any input is 1. This is the truth table of the OR gate (C = A + B).

Answer: (1)

AIPMT 2012 (Prelims)

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2

In a CE transistor amplifier, the audio signal voltage across the collector resistance of 2 k is 2 V. If the base resistance is 1 k and the current amplification of the transistor is 100, the input signal voltage is

  1. 0.1 V
  2. 1.0 V
  3. 1 mV
  4. 10 mV
Out of syllabusAIPMT 2012 (Prelims)
3

Transfer characteristics [output voltage (V0) vs input voltage (Vi)] for a base biased transistor in CE configuration is as shown in the figure. For using transistor as a switch, it is used [figure]

  1. in region III
  2. both in region (I) and (III)
  3. in region II
  4. in region I
Out of syllabusAIPMT 2012 (Prelims)
4

A Zener diode, having breakdown voltage equal to 15 V, is used in a voltage regulator circuit shown in figure. The current through the diode is [figure]

  1. 5 mA
  2. 10 mA
  3. 15 mA
  4. 20 mA
AIPMT 2011 (Mains)
5

In the following figure, the diodes which are forward biased, are [figure]

  1. (A), (B) and (D)
  2. (C) only
  3. (C) and (A)
  4. (B) and (D)
AIPMT 2011 (Mains)
6

Pure Si at 500 K has equal number of electron (ne) and hole (nh) concentrations of 1.5 1016 m-3. Doping by indium increases nh to 4.5 1022 m-3. The doped semiconductor is of

  1. p-type having electron concentration ne = 5 109 m-3
  2. n-type with electron concentration ne = 5 1022 m-3
  3. p-type with electron concentration ne = 2.5 1010 m-3
  4. n-type with electron concentration ne = 2.5 1023 m-3
AIPMT 2011 (Mains)
7

In forward biasing of the p-n junction

  1. the positive terminal of the battery is connected to p-side and the depletion region becomes thick.
  2. the positive terminal of the battery is connected to n-side and the depletion region becomes thin.
  3. the positive terminal of the battery is connected to n-side and the depletion region becomes thick.
  4. the positive terminal of the battery is connected to p-side and the depletion region becomes thin.
AIPMT 2011 (Prelims)
8

Symbolic representations of four logic gates are shown as [figure] Pick out which ones are for AND, NAND and NOT gates, respectively

  1. (ii), (iii) and (iv)
  2. (iii), (ii) and (i)
  3. (iii), (ii) and (iv)
  4. (iii), (iv) and (ii)
AIPMT 2011 (Prelims)
9

If a small amount of antimony is added to germanium crystal

  1. it becomes a p-type semiconductor
  2. the antimony becomes an acceptor atom
  3. there will be more free electrons than holes in the semiconductor
  4. its resistance is increased
AIPMT 2011 (Prelims)
10

A transistor is operated in common emitter configuration at VC = 2 V such that a change in the base current from 100 A to 300 A produces a change in the collector current from 10 mA to 20 mA. The current gain is

  1. 50
  2. 75
  3. 100
  4. 25
Out of syllabusAIPMT 2011 (Prelims)
11

The following figure shows a logic gate circuit with two inputs A and B and the output Y. The voltage waveforms of A, B and Y are as given. [figure] The logic gate is

  1. NOR gate
  2. OR gate
  3. AND gate
  4. NAND gate
AIPMT 2010 (Mains)

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