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Semiconductor Electronics · Question 92

AIPMT 2004MCQEasy📈 Topic in 0% papers+4−1
1

In semiconductors at room temperature

  1. the valence band is partially empty and the conduction band is partially filled
  2. the valence band is completely filled and the conduction band is partially filled
  3. the valence band is completely filled
  4. the conduction band is completely empty

Answer

(1) the valence band is partially empty and the conduction band is partially filled

Solution

As per NCERT, in a semiconductor the band gap is small (Eg < 3 eV). At room temperature some electrons from the valence band gain enough thermal energy to cross the gap into the conduction band.

Holes are left in the valence band (partially empty) and a few electrons occupy the conduction band (partially filled).

Answer: (1)

AIPMT 2004

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2

The peak voltage in the output of a half wave diode rectifier fed with a sinusoidal signal without filter is 10 V. The d.c. component of the output voltage is

  1. (10/ 2) V
  2. ( 10 ) V
  3. 10 V
  4. (20/ ) V
AIPMT 2004
3

The output of OR gate is 1

  1. if both inputs are zero
  2. if either or both inputs are 1
  3. only if both inputs are 1
  4. if either input is zero
AIPMT 2004
4

Of the diodes shown in the following diagrams, which one is reverse biased?

  1. [figure]
  2. [figure]
  3. [figure]
  4. [figure]
AIPMT 2004
5

Reverse bias applied to a junction diode

  1. lowers the potential barrier
  2. raises the potential barrier
  3. increases the majority carrier current
  4. increases the minority carrier current
AIPMT 2003
6

If a full wave rectifier circuit is operating from 50 Hz mains, the fundamental frequency in the ripple will be

  1. 25 Hz
  2. 50 Hz
  3. 70.7 Hz
  4. 100 Hz
AIPMT 2003
7

Barrier potential of a p-n junction diode does not depend on

  1. diode design
  2. temperature
  3. forward bias
  4. doping density
AIPMT 2003
8

An n-p-n transistor conducts when

  1. both collector and emitter are positive with respect to the base
  2. collector is positive and emitter is negative with respect to the base
  3. collector is positive and emitter is at same potential as the base
  4. both collector and emitter are negative with respect to the base
Out of syllabusAIPMT 2003
9

In a p-n junction

  1. high potential at n side and low potential at p side
  2. high potential at p side and low potential at n side
  3. p and n both are at same potential
  4. undetermined.
AIPMT 2002
10

The given truth table is for which logic gate? [figure]

  1. NAND
  2. XOR
  3. NOR
  4. OR.
AIPMT 2002
11

For the given circuit of p-n junction diode, which is correct? [figure]

  1. in forward bias the voltage across R is V
  2. in reverse bias the voltage across R is V
  3. in forward bias the voltage across R is 2V
  4. in reverse bias the voltage across R is 2V.
AIPMT 2002

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